Multiscale Approaches for Electronic Device Simulation
Author:
Affiliation:
1. University of Rome Tor Vergata, Via del Politecnico 1,Department of Electronic Engineering,Rome,Italy,00133
2. CNR-ISMN, Via Salaria Km. 29.300,Monterotondo,Rome,Italy,00017
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10343386/10343419/10343710.pdf?arnumber=10343710
Reference6 articles.
1. Quantum-corrected drift-diffusion models for transport in semiconductor devices
2. Multiscale approaches for the simulation of InGaN/GaN LEDs
3. Coupling atomistic and continuous media models for electronic device simulation
4. Nonequilibrium Green’s Function Modeling of Trap-Assisted Tunneling in InxGa1−xN /GaN Light-Emitting Diodes
5. Interface Roughness, Carrier Localization, and Wave Function Overlap in c -Plane (In,Ga)N/GaN Quantum Wells: Interplay of Well Width, Alloy Microstructure, Structural Inhomogeneities, and Coulomb Effects
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