Complementary Inverter Based on C60 and Pentacene Doped CVD Graphene Field Effect Transistors on SiO₂-Reference-Cited by-同舟云学术

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Complementary Inverter Based on C60 and Pentacene Doped CVD Graphene Field Effect Transistors on SiO₂

Published:2023-10-22 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)
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Author:

Oswald Jacopo¹,Beretta Davide¹,Stiefel Michael¹,Furrer Roman¹,Vuillaume Dominique²,Calame Michel¹

Affiliation:

1. Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129,Dübendorf,Switzerland,8600

2. IEMN, Institute of Electronic, Microelectronic and Nanotechnology, Centre National de la Recherche Scientifique,Villeneuve d’Ascq,France,59652

Funder

National Science Foundation

Agence Nationale de la Recherche

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10343386/10343419/10343800.pdf?arnumber=10343800

Reference12 articles.

1. Graphene-based flexible and wearable electronics

2. Recent advances in chemical vapour deposition techniques for graphene-based nanoarchitectures: From synthesis to contemporary applications

3. Green syntheses of graphene and its applications in internet of things (IoT)—a status review

4. Advances in Flexible Optoelectronics Based on Chemical Vapor Deposition‐Grown Graphene

5. The Effect of C60 and Pentacene Adsorbates on the Electrical Properties of CVD Graphene on SiO2

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