Experimental and theoretical study of the current-voltage characteristics of the MISIM tunnel transistor
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx4/16/15420/00711354.pdf?arnumber=711354
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytical Modeling of the Temporal Response of the Transient Displacement Currents in MIS Tunnel Diodes Under Low-Voltage Operation;IEEE Transactions on Electron Devices;2024-02
2. Gate Oxide Local Thinning Mechanism-Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor;IEEE Transactions on Electron Devices;2019-01
3. Light Sensing Enhancement and Energy Saving Improvement in Concentric Double-MIS(p) Tunnel Diode Structure With Inner Gate Outer Sensor Operation;IEEE Transactions on Electron Devices;2018-11
4. Light-to-Dark Current Ratio Enhancement on MIS Tunnel Diode Ambient Light Sensor by Oxide Local Thinning Mechanism and Near Power-Free Neighboring Gate;IEEE Transactions on Electron Devices;2018-05
5. Tunable Negative Differential Resistance in MISIM Tunnel Diodes Structure With Concentric Circular Electrodes Controlled by Designed Substrate Bias;IEEE Transactions on Electron Devices;2017-12
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