GaN HEMT with a Surface Superjunction with Low-doped Zones

Author:

Luo Qian1,Liu Tianjun1,Li Haiyang1

Affiliation:

1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China

Publisher

IEEE

Reference19 articles.

1. High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD- /RFSputtered;choi,2014

2. 600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

3. GaN based Super HFETs over 700V using the polarization junction concept

4. Multi-Channel Tri-gate GaN Power Schottky Diodes with Low ONResistance;ma,2018

5. Novel 2000 V Normally-off MOS-HEMTs using AlN/GaN Superlattice Channel

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