GaN HEMT with a Surface Superjunction with Low-doped Zones
Author:
Affiliation:
1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10210847/10211258/10211667.pdf?arnumber=10211667
Reference19 articles.
1. High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD- /RFSputtered;choi,2014
2. 600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
3. GaN based Super HFETs over 700V using the polarization junction concept
4. Multi-Channel Tri-gate GaN Power Schottky Diodes with Low ONResistance;ma,2018
5. Novel 2000 V Normally-off MOS-HEMTs using AlN/GaN Superlattice Channel
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