An SEU-hardened CMOS data latch design

Author:

Rockett L.R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 72 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Soft Error Upset Recovery SRAM Cell for Aerospace and Military Applications;TENCON 2023 - 2023 IEEE Region 10 Conference (TENCON);2023-10-31

2. An SEU-hardened ternary SRAM design based on efficient ternary C-elements using CNTFET technology;Microelectronics Reliability;2023-01

3. A review on radiation‐hardened memory cells for space and terrestrial applications;International Journal of Circuit Theory and Applications;2022-09-07

4. Radiation Effects in a Post-Moore World;IEEE Transactions on Nuclear Science;2021-05

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