Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs-Reference-Cited by-同舟云学术

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Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Abhinay S.¹,Wu W.-M.¹,Shih C.-A.¹,Chen S.-H.¹,Sibaja-Hernandez A.¹,Parvais B.¹,Peralagu U.¹,Alian A.¹,Wu T.-L.²,Ker M.-D.²,Groeseneken G.¹,Collaert N.¹

Affiliation:

1. imec,Kapeldreef 75,Leuven,Belgium,3001

2. National Yang Ming Chiao Tung University,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019357.pdf?arnumber=10019357

Reference12 articles.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs;IEEE Transactions on Electron Devices;2023-12

2. Solutions To Improve HBM ESD Robustness of GaN RF HEMTs;2023 45th Annual EOS/ESD Symposium (EOS/ESD);2023-10-02

3. ON-State Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs;IEEE Electron Device Letters;2023-08

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