GaN Field Emitter Arrays with JA of 10 A/cm<sup>2</sup> at V<sub>GE</sub> = 50 V for Power Applications-Reference-Cited by-同舟云学术

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GaN Field Emitter Arrays with JA of 10 A/cm² at V_GE = 50 V for Power Applications

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Shih P.-C.¹,Zheng T.²,Arellano-Jimenez M. J.³,Gnade B.²,Akinwande A. I.¹,Palacios T.¹

Affiliation:

1. Massachusetts Institute of Technology,Microsystems Technology Laboratories,Cambridge,USA,MA 02139

2. Southern Methodist University,Electrical and Computer Engineering,Dallas,TX,USA

3. University of Texas at Dallas,Department of Materials Science and Engineering,Richardson,TX,USA

Funder

Air Force Office of Scientific Research

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019399.pdf?arnumber=10019399

Reference6 articles.

1. Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process

2. Silicon Field Emitter Arrays With Current Densities Exceeding 100 A/cm² at Gate Voltages Below 75 V

3. Highly uniform silicon field emitter arrays fabricated using a trilevel resist process

4. Stable and High Performance AlGaN Self-Aligned-Gate Field Emitter Arrays

5. Nanoscale vacuum channel transistors fabricated on silicon carbide wafers

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Emission enhancement of GaN field emitter arrays in an N2 environment;Journal of Vacuum Science & Technology B;2024-07-01

2. Degradation of GaN field emitter arrays induced by O2 exposure;Journal of Vacuum Science & Technology B;2024-01-01

3. Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistors;IEEE Electron Device Letters;2023-11

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