An analytical model for back-gate effects on ultrathin-film SOI MOSFET's
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/55/3413/00119156.pdf?arnumber=119156
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. General Overview of the Basic Structure and Operation of a Typical Silicon on Insulator Metal–Semiconductor Field Effect Transistor (SOI-MESFET);Device Physics, Modeling, Technology, and Analysis for Silicon MESFET;2018-12-14
2. Analytical modeling of the substrate influences on accumulation-mode SOI pMOSFETs at room temperature and at liquid nitrogen temperature;Solid-State Electronics;1997-09
3. Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77 K;Microelectronic Engineering;1997-06
4. The effect of power supply voltage scaling on the total dose radiation response of fully-depleted SOI MOS transistors;IEEE Transactions on Nuclear Science;1995-12
5. MOS Transistor Characteristics;Electrical Characterization of Silicon-on-Insulator Materials and Devices;1995
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