A Method for Separation of Power Semiconductor Packaging-Related Wear-Out Mechanisms Under Converter Operation-Reference-Cited by-同舟云学术

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A Method for Separation of Power Semiconductor Packaging-Related Wear-Out Mechanisms Under Converter Operation

Published:2024-04 Issue:4 Volume:71 Page:4201-4209
ISSN:0278-0046
Container-title:IEEE Transactions on Industrial Electronics
language:
Short-container-title:IEEE Trans. Ind. Electron.

Author:

Peng Yingzhou¹^ORCID,Wang Haoran²^ORCID,Wang Huai³^ORCID

Affiliation:

1. College of Electrical and Information Engineering, Hunan University, Changsha, Hunan, China

2. Three Gorges Intelligent Industrial Control Technology Corporation Ltd., Wuhan, China

3. Department of Energy Technology, Aalborg University, Aalborg, Denmark

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

http://xplorestaging.ieee.org/ielx7/41/10303745/10122862.pdf?arnumber=10122862

Reference23 articles.

1. Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

2. A Lifetime Estimation Technique for Voltage Source Inverters

3. Heat-Flux-Based Condition Monitoring of Multichip Power Modules Using a Two-Stage Neural Network

4. Low Stress Cycle Effect in IGBT Power Module Die-Attach Lifetime Modeling

5. An Online Frequency-Domain Junction Temperature Estimation Method for IGBT Modules

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1. In Situ Monitoring Chip Failure in Multichip IGBT Modules Using Turn-On Delay Time Extracted From Auxiliary Emitter Voltage;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-06

2. Real time conditioning monitoring of MOSFET using artificial neural network regression;Measurement Science and Technology;2024-05-22

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