High-performance low-base-collector capacitance AlGaAs/GaAs heterojunction bipolar transistors fabricated by deep ion implantation-Reference-Cited by-同舟云学术

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High-performance low-base-collector capacitance AlGaAs/GaAs heterojunction bipolar transistors fabricated by deep ion implantation

Published:1995-11 Issue:11 Volume:16 Page:512-514
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ho M.-C.,Johnson R.A.,Ho W.J.,Chang M.F.,Asbeck P.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/9854/00468284.pdf?arnumber=468284

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of high-speed InP/InGaAs/InP DHBT with a new self-aligned metallization technique for reduced base resistance;Solid-State Electronics;2006-09

2. SiGe Heterojunction Bipolar Transistors and Circuits Toward Terahertz Communication Applications;IEEE Transactions on Microwave Theory and Techniques;2004-10

3. New collector undercut technique using a SiN sidewall for low base contact resistance in InP/InGaAs SHBTs;IEEE Transactions on Electron Devices;2002-06

4. SMALL-SCALE InGaP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED AND LOW-POWER INTEGRATED-CIRCUIT APPLICATIONS;International Journal of High Speed Electronics and Systems;2001-03

5. Submicron scaling of HBTs;IEEE Transactions on Electron Devices;2001

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