Active-precharge hammering on a row induced failure in DDR3 SDRAMs under 3× nm technology
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7041331/7049485/07049516.pdf?arnumber=7049516
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Unveiling RowPress in Sub-20 nm DRAM Through Comparative Analysis With Row Hammer: From Leakage Mechanisms to Key Features;IEEE Transactions on Electron Devices;2024-08
2. Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
3. Spatial Variation-Aware Read Disturbance Defenses: Experimental Analysis of Real DRAM Chips and Implications on Future Solutions;2024 IEEE International Symposium on High-Performance Computer Architecture (HPCA);2024-03-02
4. RowPress: Amplifying Read Disturbance in Modern DRAM Chips;Proceedings of the 50th Annual International Symposium on Computer Architecture;2023-06-17
5. Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
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