Performance Evaluation of Gaussian Doped & Work Function Engineered Lateral β-Ga2O3 MOSFET for High Power RF Applications
Author:
Affiliation:
1. University of Delhi,Department of Electronic Science,New Delhi,India,110021
Funder
University Grants Commission
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10150428/10150460/10150943.pdf?arnumber=10150943
Reference14 articles.
1. Dual-material gate (DMG) field effect transistor
2. Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate
3. ATLAS: 2-D Device Simulator, Version 5.19.20.R,2014
4. Gaussian Doped Planar 4H-SiC Junctionless Field Effect Transistor For Enhanced Gate Controllability
5. Fast Switching $\beta$ -Ga2O3 Power MOSFET With a Trench-Gate Structure
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