Impact of Dual Material Gate Design on Recessed Gate ß - Ga<sub>2</sub>O<sub>3</sub> MOSFET for High Frequency Applications-Reference-Cited by-同舟云学术

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Impact of Dual Material Gate Design on Recessed Gate ß - Ga₂O₃ MOSFET for High Frequency Applications

Published:2023-11-25 Issue: Volume: Page:218-221
ISSN:
Container-title:2023 IEEE 9th International Women in Engineering (WIE) Conference on Electrical and Computer Engineering (WIECON-ECE)
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Author:

Goyal Priyanshi¹,Kaur Harsupreet¹

Affiliation:

1. University of Delhi South Campus,Department of Electronic Science,New Delhi,India,110021

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10456368/10456369/10456442.pdf?arnumber=10456442

Reference18 articles.

1. Fundamental limits of high-efficiency silicon and compound semiconductor power amplifiers in 100-300 GHz bands

2. Germanium Based Field-Effect Transistors: Challenges and Opportunities

3. Reassessment of the intrinsic bulk recombination in crystalline silicon

4. Wide band gap semiconductor technology: State-of-the-art

5. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

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