Design and manufacturability aspect of SOI CMOS RFICs-Reference-Cited by-同舟云学术

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Design and manufacturability aspect of SOI CMOS RFICs

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Container-title:Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571)
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Author:

Jonghae Kim ,Plouchart J.-O.,Zamdmer N.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9389/29800/01358880.pdf?arnumber=1358880

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 60-GHz LNA and a 92-GHz Low-Power Distributed Amplifier in CMOS with Above-IC;2008 European Microwave Integrated Circuit Conference;2008-10

2. Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect;Japanese Journal of Applied Physics;2008-04-18

3. On the RF Extrinsic Resistance Extraction for Partially-Depleted SOI MOSFETs;IEEE Microwave and Wireless Components Letters;2007-05

4. SOI CMOS technology for RF/MMIC applications-yes or no?;Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.

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