Comparative study on characteristics of GaN-based MIS-HEMTs with Al2O3 and Si3N4 gate insulators under Hot Carrier Degradation-Reference-Cited by-同舟云学术

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Comparative study on characteristics of GaN-based MIS-HEMTs with Al2O3 and Si3N4 gate insulators under Hot Carrier Degradation

Published:2023-03-27 Issue: Volume: Page:
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Container-title:2023 35th International Conference on Microelectronic Test Structure (ICMTS)
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Author:

Wu Pei-Yu¹,Tsai Xin-Ying²,Chang Ting-Chang³,Tsai Tsung-Ming¹,Sze Simon M.²

Affiliation:

1. National Sun Yat-Sen University,Pei-Yu Wu and Tsung-Ming Tsai are with the Department of Materials and Optoelectronic Science,Kaohsiung,Taiwan,80424

2. National Yang Ming Chiao Tung University,Xin-Ying Tsai and Simon M. Sze are with the Department of Electronics Engineering,Hsinchu,Taiwan.,30010

3. National Sun Yat-Sen University,Ting-Chang Chang is with Department of Physics, and also with College of Semiconductor and Advanced Technology Research,Kaohsiung,Taiwan,804

Funder

National Science and Technology Council

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10094038/10094053/10094072.pdf?arnumber=10094072

Reference14 articles.

1. Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN

2. On impact ionization and avalanche in gallium nitride

3. a two-dimensional computer simulation of hot carrier effects in mosfets;wada;1981 International Electron Devices Meeting,1981

4. Impact ionization in high performance AlGaN/GaN HEMTs

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