Compact modeling and digital twins of capacitive fractal microsystems: characteristics variations caused by heavy charged particles
Author:
Affiliation:
1. Bauman Moscow State Technical University,Department of Design and Technology of Electronic Devices,Moscow,Russia
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10086702/10086686/10086770.pdf?arnumber=10086770
Reference12 articles.
1. Device and Process Simulation in TCAD Sentaurus System;glushko,2015
2. SRIM - The Stopping and Range of Ions in Matter;ziegler,0
3. Parallel Algorithm for Electrical Characteristics Simulation of Microsystems Affected by Heavy Charged Particles;terekhov;Proc of XIX All-Russian Youth Scientific and Technical Conference "Radiolocation and Communication — Emerging Technologies",2021
4. Synopsys TCAD,0
5. Simulation of the impact of heavy charged particles on the characteristics of field-effect silicon-on-insulator transistors
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