Impact of substrate thickness on single-event effects in integrated circuits
Author:
Affiliation:
1. Sandia Nat. Labs., Albuquerque, NM, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx5/23/21189/00983144.pdf?arnumber=983144
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact;IEEE Access;2022
2. TCAD study of latch-up sensitivity to wafer thinning below 500 nm;2021 International Semiconductor Conference (CAS);2021-10-06
3. Active Radiation-Hardening Strategy in Bulk FinFETs;IEEE Access;2020
4. A Chip-Level Single-Event Latchup (SEL) Estimation Methodology;IEEE Transactions on Nuclear Science;2020-01
5. New Approach of Single Event Latchup Modeling Based on TCAD Simulations and Design of Experiment Analysis;2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2019-09
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