Effects of silicon layer properties on device reliability for 0.1-μm SOI n-MOSFET design strategies
-
Published:1997-05
Issue:5
Volume:44
Page:815-821
-
ISSN:0018-9383
-
Container-title:IEEE Transactions on Electron Devices
-
language:
-
Short-container-title:IEEE Trans. Electron Devices
Author:
Hulfachor R.B.,Kim K.W.,Littlejohn M.A.,Osburn C.M.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials