Process and Contamination Effects on the Single-Event Response of AlSb/InAs HEMTs-Reference-Cited by-同舟云学术

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Process and Contamination Effects on the Single-Event Response of AlSb/InAs HEMTs

Published:2010-12 Issue: Volume: Page:
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

DasGupta Sandeepan,McMorrow Dale,Reed Robert A.,Schrimpf Ronald D.,Boos J. Brad,Ramachandran Vishwa

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/5657993/05594659.pdf?arnumber=5594659

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of SiNx Passivated Dual Field Plate AlGaN/GaN HEMTs on Silicon Carbide and Sapphire Substrates Under Radiation Environment;Silicon;2023-05-16

2. Single-Event Transient Sensitivity of InAlSb/InAs/AlGaSb High Electron Mobility Transistors;IEEE Transactions on Nuclear Science;2012-12

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