Fabrication and Electrical Properties of Novel ZnTiO3/Si Capacitors with Various Zn(NO3)2 Concentrations
Author:
Affiliation:
1. National Kaohsiung University of Science and Technology,Department of Microelectronics Engineering,Kaohsiung,Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9983535/9983517/09983549.pdf?arnumber=9983549
Reference11 articles.
1. Structural, Electrical and Dielectric Properties of DC Reactive Magnetron Sputtered ZrO2 Films for Metal-Oxide-Semiconductor Devices
2. Optimizing n-ZnO/p-Si heterojunctions for photodiode applications
3. Surface passivation property of aluminum oxide thin film on silicon substrate by liquid phase deposition
4. Effect of phase transformation on optical and dielectric properties of pulsed laser deposited ZnTiO3 thin films
5. High dielectric constant oxides;roberston;Eur Phys J Appl Phys,2004
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