Virtual PCB Layout Prototyping: Importance of Modeling Gate Driver and Parasitic Capacitances

Author:

Nagel Michel1,Race Salvatore1,Kovacevic-Badstuebner Ivana1,Ziemann Thomas1,Grossner Ulrike1

Affiliation:

1. ETH Zurich,Advanced Power Semiconductor Laboratory,Zurich,Switzerland

Publisher

IEEE

Reference7 articles.

1. A Component Manipulation Algorithm to Enable Design Automation of Power Electronic PCBs

2. PowerSynth Integrated CAD flow for High Density Power Modules

3. Towards Digital Twins for the Optimization of Power Electronic Switching Cells with Discrete SiC Power MOSFETs;race;Proc of International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management (PCIM Europe),2022

4. A flexible test bench for power semiconductor switching loss measurements

5. Tools for Broadband Electromagnetic Modeling of Power Semiconductor Packages and External Circuit Layouts

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Influence of the rds,on temperature dependency of SiC MOSFETs on the optimal switching cell mechanical layout;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

2. High-frequency All SiC Improved Quadratic Boost Converter;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27

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