GaN technologies for applications from L- to Ka-band-Reference-Cited by-同舟云学术

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GaN technologies for applications from L- to Ka-band

Published:2017-11 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS)
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Author:

Lien Yi-Wei,Peng Sheng-Wen,Lin Che-Kai,Du Jhih-Han,Hsieh Yun-Ting,Tseng Andy,Wang Wei-Chou,Chou Tung-Yao,Lin Wayne,Jhan Richard,Huang Clement,Takatani Shinichiro,Wohlmuth Walter

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8231153/8244703/08244831.pdf?arnumber=8244831

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spacer Side-wall Processed 0.15 μm GaN HEMT for Ka-band Application;ECS Journal of Solid State Science and Technology;2024-07-01

2. Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications;IEEE Journal of the Electron Devices Society;2023

3. Performance Improvement and Layout Design Comparison of AlGaN/GaN HEMT for Ka- Q- and V-band Applications;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

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