A 16–24-GHz SiGe Decibel-Linear Low-Gain-Error Digitally Controlled High-Efficiency Variable Gain Amplifier
Author:
Affiliation:
1. Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology and the School of Microelectronics, Tianjin University, Tianjin, China
2. ZTE Corporation, Shenzhen, China
Funder
State Key Laboratory of Mobile Network and Mobile Multimedia Technology, ZTE Corporation
Guangdong Provincial Key Research and Development Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/9789504/09677013.pdf?arnumber=9677013
Reference13 articles.
1. Temperature-Compensated dB-linear Digitally Controlled Variable Gain Amplifier With DC Offset Cancellation
2. A Reconfigurable K-/Ka-Band Power Amplifier With High PAE in 0.18- $\mu$m SiGe BiCMOS for Multi-Band Applications
3. A K-Band Dual-Mode Common Gate Cross-Summing VG-LNA With Low Phase Variation
4. A 12 GHz 22 dB-Gain-Control SiGe Bipolar VGA With 2° Phase-Shift Variation
5. A Ka-band CMOS Digital-Controlled Phase-Invariant Variable Gain Amplifier with 4-bit Tuning Range and 0.5-dB Resolution
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1. Ka-Band Tx Integrated Circuits in 0.13 $\mu$m SiGe BiCMOS for AESA for SATCOM Applications;2024 IEEE 15th Latin America Symposium on Circuits and Systems (LASCAS);2024-02-27
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