A Novel 5-GHz SPDT Switch Using Semiconductor Distributed Doped Areas-Reference-Cited by-同舟云学术

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A Novel 5-GHz SPDT Switch Using Semiconductor Distributed Doped Areas

Published:2020-04 Issue:4 Volume:30 Page:421-424
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Allanic Rozenn^ORCID,Le Berre Denis^ORCID,Quendo Cedric^ORCID,Chouteau David,Grimal Virginie^ORCID,Valente Damien,Billoue Jerome^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/9061064/09034501.pdf?arnumber=9034501

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Dynamic Range Attenuator Using ScDDAs as Integrated Distributed Tunable Resistors on Silicon;IEEE Electron Device Letters;2024-03

2. Receiving and Transmitting Antenna Pairs Based Rasorber With High Angular Stability;IEEE Transactions on Microwave Theory and Techniques;2023-08

3. Monolithic Co-Design of a 15 GHz SPDT-Antenna Allowing Polarization Reconfigurability;2023 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting (USNC-URSI);2023-07-23

4. Fully Integrated Bandpass Filter with High Isolation Attenuator Function Using Semi-conductor Distributed Doped Areas;2022 Asia-Pacific Microwave Conference (APMC);2022-11-29

5. Wideband Active Switch for Electronic Warfare System Applications;Advances in Science, Technology and Engineering Systems Journal;2020-12

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