New Formulation of Cardiff Behavioral Model Including DC Bias Voltage Dependence
Author:
Affiliation:
1. Center for High Frequency Engineering (CHFE), School of Engineering, Cardiff University, Cardiff, U.K.
Funder
Ampleon Netherlands Company
Ph.D. Research Project
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/9789504/09684241.pdf?arnumber=9684241
Reference15 articles.
1. Gate Bias Incorporation into Cardiff Behavioural Modelling Formulation
2. Robust Extraction of Cardiff Model Parameters from Appropriately Tailored Measured Load-Pull Data
3. Waveform Inspired Models and the Harmonic Balance Emulator
4. A systematic investigation of behavioural model complexity requirements;moure;Proc 13th Eur Microw Integr Circuits Conf (EuMIC),2018
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