A 220–261 GHz Frequency Multiplier Chain (× 18) With 8-dBm Peak Output Power in 130-nm SiGe
Author:
Affiliation:
1. Silicon Radar GmbH, Frankfurt (Oder), Germany
2. Institute of Radio Frequency Engineering and Electronics, Karlsruhe Institute of Technology, Karlsruhe, Germany
Funder
German Federal Ministry of Education and Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/9816061/09732898.pdf?arnumber=9732898
Reference17 articles.
1. A Low-Power 255-GHz Single-Stage Frequency Quadrupler in 130-nm SiGe BiCMOS
2. A 212–260 GHz broadband frequency multiplier chain ($\times4$ ) in 130-nm BiCMOS technology;yu;IEEE MTT-S Int Microw Symp Dig,2021
3. Analysis and Design of a 17-GHz All-npn Push-Pull Class-C VCO
4. SiGe HBT technology with $\text{f}_{T}/\text{f}_{max}$ of 300GHz/500GHz and 2.0 ps CML gate delay;heinemann;IEDM Tech Dig,2010
5. W-Band Silicon-Based Frequency Synthesizers Using Injection-Locked and Harmonic Triplers
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