A Ka-Band Low-EVM Subharmonically Injection-Locked FLL IQ Modulator Using Stacked-Boosting and Dual-Injection Technique-Reference-Cited by-同舟云学术

A Ka-Band Low-EVM Subharmonically Injection-Locked FLL IQ Modulator Using Stacked-Boosting and Dual-Injection Technique

Published:2023-03 Issue:3 Volume:33 Page:287-290
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Chang Hong-Yeh¹^ORCID,Chen Wei-Cheng¹^ORCID,Lin Tien-Yi¹

Affiliation:

1. Department of Electrical Engineering, National Central University, Taoyuan, Jhongli, Taiwan

Funder

National Science and Technology Council (NSTC), Taiwan

Industrial Technology Research Institute (ITRI) and the Taiwan Semiconductor Research Institute (TSRI), Hsinchu, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10065598/09935674.pdf?arnumber=9935674

Reference14 articles.

1. An 100-to-110 GHz Low-dc-power Sub-harmonically Injection-Locked Quadrature Oscillator using Stacked Boosting Technique in 90-nm CMOS Process

2. 2.8 A mixed-mode injection frequency-locked loop for self-calibration of injection locking range and phase noise in 0.13?m CMOS;shin;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2016

3. A K-band CMOS Low-Phase-Noise Sub-harmonically Injection-Locked QVCO with Divider-less Frequency-tracking Loop

4. Design and Analysis of CMOS Low-Phase-Noise Low Quadrature Error $V$ -Band Subharmonically Injection-Locked Quadrature FLL

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