An E-Band High-Performance Variable Gain Low Noise Amplifier for Wireless Communications in 90-nm CMOS Process
Author:
Affiliation:
1. Department of Electrical Engineering and the Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan
Funder
Ministry of Science and Technology (MOST), Taipei, Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/9874952/09745748.pdf?arnumber=9745748
Reference18 articles.
1. An 88.5–110 GHz CMOS Low-Noise Amplifier for Millimeter-Wave Imaging Applications
2. A Wide Gain Control Range V-Band CMOS Variable-Gain Amplifier With Built-In Linearizer
3. A 60–90-GHz CMOS Double-Neutralized LNA Technology With 6.3-dB NF and −10dBm P−1dB
4. A 0.6-V VDD W-Band Neutralized Differential Low Noise Amplifier in 28-nm Bulk CMOS
5. Low-Area Active-Feedback Low-Noise Amplifier Design in Scaled Digital CMOS
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2. A 29-48 GHz Variable Gain Low Noise Amplifier Using Active Load in 90-nm CMOS Process;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
3. A 70-to-110 GHz 28-nm CMOS Low Noise Amplifier with 6.1-dB NF Minimum Using Differential Noise Optimization;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19
4. Performance and Evaluation of CG-CS LNA over Gain and Noise Optimization;2024 7th International Conference on Devices, Circuits and Systems (ICDCS);2024-04-23
5. A high gain-flatness C-band variable gain LNA in a 0.25 μm GaAs pHEMT process;Microelectronics Journal;2024-03
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