Flicker Noise and Its Degradation Characteristics Under Electrical Stress in MOSFETs With Thin Strained-Si/SiGe Dual-Quantum Well-Reference-Cited by-同舟云学术

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Flicker Noise and Its Degradation Characteristics Under Electrical Stress in MOSFETs With Thin Strained-Si/SiGe Dual-Quantum Well

Published:2007-07 Issue:7 Volume:28 Page:603-605
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jiang Y.,Loh W.Y.,Chan D.S.H.,Xiong Y.Z.,Ren C.,Lim Y.F.,Lo G.Q.,Kwong D.-L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4252183/04252200.pdf?arnumber=4252200

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Highly Compressive Interlayer-Dielectric-$ \hbox{SiN}_{x}$ Stressing Layer on $\hbox{1}/f$ Noise and Reliability of SiGe-Channel pMOSFETs;IEEE Electron Device Letters;2010-12

2. Low-frequency noise assessment of the silicon passivation of Ge pMOSFETs;Thin Solid Films;2010-02

3. Flicker-Noise Improvement in 100-nm $L_{g}\ \hbox{Si}_{0.50}\hbox{Ge}_{0.50}$ Strained Quantum-Well Transistors Using Ultrathin Si Cap Layer;IEEE Electron Device Letters;2010-01

4. Impact strain engineering on gate stack quality and reliability;Solid-State Electronics;2008-08

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