A 64.5-88 GHz Coupling-Concerned CMOS LNA with >10 dB Gain and 5 dB Minimum NF-Reference-Cited by-同舟云学术

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A 64.5-88 GHz Coupling-Concerned CMOS LNA with >10 dB Gain and 5 dB Minimum NF

Published:2020-08 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE/MTT-S International Microwave Symposium (IMS)
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Author:

Zhang Kaijuan,Shi Chunqi,Chen Guangsheng,Chen Jinghong,Zhang Runxi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9212188/9223768/09224000.pdf?arnumber=9224000

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 58–110 GHz 4.2 dB Minimum NF CMOS LNA With Broadband Simultaneous Noise and Impedance Matching;IEEE Microwave and Wireless Technology Letters;2024-05

2. A Low-Power 23–25.5-GHz FMCW Radar Transceiver in 65-nm CMOS for AIOT Applications;IEEE Transactions on Microwave Theory and Techniques;2024-04

3. A 18–33 GHz CMOS LNA with 26.7 dB peak gain and 2.8 dB minimum NF for K/Ka-band applications;AEU - International Journal of Electronics and Communications;2024-04

4. A Low-Power Low-Noise W-band LNA in 90-nm CMOS Process With Source Degeneration Technique;IEEE Microwave and Wireless Technology Letters;2024-01

5. A 74.8-88.8 GHz Wideband CMOS LNA Achieving +4.73 dBm OP1dB and 6.39 dB Minimum NF;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

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