Improved Analog Performance of PZT Ferroelectric AlGaN/AlN/GaN E-Mode GR-MOSHEMT-Reference-Cited by-同舟云学术

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Improved Analog Performance of PZT Ferroelectric AlGaN/AlN/GaN E-Mode GR-MOSHEMT

Published:2022-02-11 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Delhi Section Conference (DELCON)
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Author:

Khan Abdul Naim¹,Chauhan Meenakshi¹,Jena K.¹,Chatterjee Gaurav¹

Affiliation:

1. The LNM Institute of Information Technology,Department of ECE,Jaipur,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9752769/9752688/09752935.pdf?arnumber=9752935

Reference17 articles.

1. Ferroelectric gate on AlGaN/GaN heterostructures;malin;2006 15th ieee international symposium on the applications of ferroelectrics ISAF,0

2. Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications

3. DC analysis of GaN-capped AlGaN/GaN HEMT for different gate-drain spacing

4. Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors

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