Improvement of Short Channel Parameters using Double Gate Graphene Channel Field Effect Transistor
Author:
Affiliation:
1. AISSM's Institute of Information Technology,Dept. of E&Tc,Pune,India
2. JSPM's Imperial College of Engineering & Research,Department of E&Tc,Pune,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9752769/9752688/09753064.pdf?arnumber=9753064
Reference8 articles.
1. Electric Field Effect in Atomically Thin Carbon Films
2. Implementation of 20 nm Graphene Channel Field Effect Transistors Using Silvaco TCAD Tool to Improve Short Channel Effects over Conventional MOSFETs
3. A simulation study of the influence of a high-k insulator and source stack on the performance of a double-gate tunnel FET
4. A computational study of short-channel effects in double-gate junctionless graphene nanoribbon field-effect transistors
5. 2-D Design of Double Gate Schottky Tunnel MOSFET for High-Performance Use in Analog/RF Applications
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