A 23.9-μW 13.6-Bit Period Modulation-Based Capacitance-to-Digital Converter With Dynamic Current Mirror Front-End-Reference-Cited by-同舟云学术

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A 23.9-μW 13.6-Bit Period Modulation-Based Capacitance-to-Digital Converter With Dynamic Current Mirror Front-End

Published:2024 Issue: Volume:7 Page:135-138
ISSN:2573-9603
Container-title:IEEE Solid-State Circuits Letters
language:
Short-container-title:IEEE Solid-State Circuits Lett.

Author:

Lee Hyeyeon¹^ORCID,Seo Donguk²^ORCID,Woo Young-Jin³^ORCID,Lee Yoonmyung²^ORCID,Lee Inhee⁴^ORCID,Chae Youngcheol⁵^ORCID

Affiliation:

1. Samsung Electronics, Hwaseong, South Korea

2. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea

3. LX Semicon, Seoul, South Korea

4. Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, USA

5. Department of Electrical and Electronics Engineering, Yonsei University, Seoul, South Korea

Funder

Basic Science Research Program through the National Research Foundation

Ministry of Science and ICT

LX Semicon Future Research Center

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/8011414/10359146/10485001.pdf?arnumber=10485001

Reference10 articles.

1. An 88.9-dB SNR Fully-Dynamic Noise-Shaping SAR Capacitance-to-Digital Converter

2. A 2.1 mW 2 MHz-BW 73.8 dB-SNDR Buffer-Embedded Noise-Shaping SAR ADC

3. A 114-AF RMS- Resolution 46-NF/10-MΩ -Range Digital-Intensive Reconfigurable RC-to-Digital Converter with Parasitic-Insensitive Femto-Farad Baseline Sensing

4. 27.6 A 0.7pF-to-10nF fully digital capacitance-to-digital converter using iterative delay-chain discharge

5. Temperature Compensation in CMOS Peaking Current References

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1. A 10-Channel, 120 nW/Channel, Reconfigurable Capacitance-to-Digital Converter for Sub-$\mu$W Robust Wearable Sensing;IEEE Transactions on Biomedical Circuits and Systems;2024-08

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