High-Voltage MOSFET-Based Stacked RF Switch With Extended Bandwidth Down to DC-Reference-Cited by-同舟云学术

High-Voltage MOSFET-Based Stacked RF Switch With Extended Bandwidth Down to DC

Published:2023 Issue: Volume:6 Page:129-132
ISSN:2573-9603
Container-title:IEEE Solid-State Circuits Letters
language:
Short-container-title:IEEE Solid-State Circuits Lett.

Author:

Syroiezhin Semen¹,Weigel Robert²^ORCID,Solomko Valentyn¹^ORCID

Affiliation:

1. Radio Frequency and Sensors, Infineon Technologies AG, Neubiberg, Germany

2. Institute of Electronics Engineering, University of Erlangen-Nuremberg, Erlangen, Germany

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8011414/10016898/10104064.pdf?arnumber=10104064

Reference12 articles.

1. CMOS RF Switch With Fast Discharge Feature

2. A novel approach to design an antenna aperture tuning circuit

3. RF Watt-Level Low-Insertion-Loss High-Bandwidth SOI CMOS Switches

4. high efficiency charge pump circuit for negative high voltage generation at 2 v supply voltage;bloch;the 24th European Solid-State Circuits Conference,1998

5. RF SPST switch based on innovative heterogeneous GaN/SOI integration technique;drillet;Proc 15th Eur Microw Integr Circuits Conf (EuMIC),2021

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