A Bootstrapped 250-nm GaN MMIC N-Path Filter With a 31 dBm In-Band P1dB
Author:
Affiliation:
1. Technion Israel Institute of Technology, Haifa, Israel
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/8011414/10359146/10413489.pdf?arnumber=10413489
Reference7 articles.
1. A Highly Linear Non-Magnetic GaN Circulator Based on Spatio-Temporal Modulation with an IIP3 of 56 dBm
2. Passive coupled-switched-capacitor-resonator-based reconfigurable RF front-end filters and duplexers
3. A 1-to-5GHz All-Passive Frequency-Translational 4th-Order N-path Filter with Low-Power Clock Boosting for High Linearity and Relaxed $\mathrm{P}_{\text{dc}}$-Frequency Trade-Off
4. A 250 nm GaN N-Path Filter IC with +27 dBm Blocker Tolerance
5. Optimized Design of N-Phase Passive Mixer-First Receivers in Wideband Operation
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