A 10 mW LNA with Temperature Compensation for 24 GHz Radar Applications in SiGe BiCMOS-Reference-Cited by-同舟云学术

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A 10 mW LNA with Temperature Compensation for 24 GHz Radar Applications in SiGe BiCMOS

Published:2020-11-16 Issue: Volume: Page:
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Container-title:2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Issakov Vadim,Werthof Andreas

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9392908/9392902/09392906.pdf?arnumber=9392906

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 26–28 GHz, Two-Stage, Low-Noise Amplifier for Fifth-Generation Radio Frequency and Millimeter-Wave Applications;Sensors;2024-03-31

2. A G-Band SiGe BiCMOS LNA With an On-Chip and Compact Temperature Compensation Biasing Circuit;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

3. Frequency-Reconfigurable Dual-Band Low-Noise Amplifier With Interstage Gm-Boosting for Millimeter-Wave 5G Communication;IEEE Microwave and Wireless Technology Letters;2023-04

4. Low-Earth Orbit User Segment in the Ku and Ka-Band: An Overview of Antennas and RF Front-End Technologies;IEEE Microwave Magazine;2023-02

5. A 21–41-GHz Common-Gate LNA With TLT Matching Networks in 28-nm FDSOI CMOS;IEEE Microwave and Wireless Components Letters;2022-09

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