Determination of trapped oxide charge in flash EPROMs and MOSFETs with thin oxides-Reference-Cited by-同舟云学术

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Determination of trapped oxide charge in flash EPROMs and MOSFETs with thin oxides

Published:1992-08 Issue:8 Volume:13 Page:439-441
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

San K.T.,Ma T.-P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/4972/00192784.pdf?arnumber=192784

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Minimized Constrains for Lateral Profiling of Hot-Carrier-Induced Oxide Charge and Interface Traps in MOSFETs;IEEE Electron Device Letters;2004-02

3. Radiation effects and hardening of MOS technology: devices and circuits;IEEE Transactions on Nuclear Science;2003-06

4. Single-wafer polysilicon engineering for the improvement of over erase in a 0.18-μm floating-gate flash memory;IEEE Transactions on Semiconductor Manufacturing;2003-05

5. Characterization of channel hot electron injection by the subthreshold slope of NROM/sup TM/ device;IEEE Electron Device Letters;2001-11

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