Scalable Monolithically Grown AlGaAs–GaAs Planar Nanowire High-Electron-Mobility Transistor-Reference-Cited by-同舟云学术

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Scalable Monolithically Grown AlGaAs–GaAs Planar Nanowire High-Electron-Mobility Transistor

Published:2011-09 Issue:9 Volume:32 Page:1227-1229
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Miao Xin,Li Xiuling

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5995811/05955069.pdf?arnumber=5955069

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sub-50 cm/s surface recombination velocity in InGaAsP/InP ridges;Applied Physics Letters;2021-11-08

2. Monolithic lateral p–n junction GaAs nanowire diodes via selective lateral epitaxy;Nanotechnology;2021-10-06

3. Droplet manipulation and horizontal growth of high-quality self-catalysed GaAsP nanowires;Nano Today;2020-10

4. Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires;Scientific Reports;2020-05-19

5. Progress in piezotronics and piezo-phototronics of quantum materials;Journal of Physics D: Applied Physics;2019-06-19

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