Differential Body-Factor Technique for Characterization of Interface Traps in MOSFETs-Reference-Cited by-同舟云学术

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Differential Body-Factor Technique for Characterization of Interface Traps in MOSFETs

Published:2011-09 Issue:9 Volume:32 Page:1206-1208
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yun Daeyoun,Bae Minkyung,Jang Jaeman,Bae Hagyoul,Shin Ja Sun,Hong Euiyeon,Lee Jieun,Kim Dae Hwan,Kim Dong Myong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5995811/05983393.pdf?arnumber=5983393

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of bulk trap density using fully I–V-based optoelectronic differential ideality factor in multi-layer MoS₂ FETs;Journal of Physics D: Applied Physics;2024-09-10

2. Investigation of Interlayer Dielectric in BaTiO₃/III‐Nitride Transistors;physica status solidi (RRL) – Rapid Research Letters;2024-04-22

3. Ferroelectric source follower for voltage-sensing nonvolatile memory and computing-in-memory;Journal of Physics D: Applied Physics;2023-08-23

4. Memory and negative-resistance effects in a strained metal-gate high-k n-type field-effect-transistor from 375 K down to 77 K;Semiconductor Science and Technology;2016-11-10

5. Fully subthreshold current-based characterization of interface traps and surface potential in III–V-on-insulator MOSFETs;Solid-State Electronics;2016-08

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