Effect of Step Doping Profile and Dual Material Gate Design on β-Ga2O3 for superior RF Performance
Author:
Affiliation:
1. University of Delhi South Campus,Department of Electronic Science,New Delhi,India,110021
Funder
University Grants Commission
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9780660/9780663/09780724.pdf?arnumber=9780724
Reference15 articles.
1. High-speed Si/SiGe technology for next generation wireless system applications
2. RF Performance Investigation of β-Ga2O3/Graphene and β-Ga2O3/Black Phosphorus Heterostructure MOSFETs
3. A novel β ‐Ga 2 O 3 HEMT with f T of 166 GHz and X‐band P OUT of 2.91 W/mm
4. Dual-material gate (DMG) field effect transistor
5. Study of Analog/Rf and Stability Investigation of Surrounded Gate Junctionless Graded Channel MOSFET(SJLGC MOSFET)
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