Investigation of Gate-all-around p-type Dual Metal Double Gate Silicon Nanotube FET-Reference-Cited by-同舟云学术

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Investigation of Gate-all-around p-type Dual Metal Double Gate Silicon Nanotube FET

Published:2022-04-21 Issue: Volume: Page:
ISSN:
Container-title:2022 6th International Conference on Devices, Circuits and Systems (ICDCS)
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Author:

Anucia A.Josephine¹,Gracia D.²,Moni D.Jackuline¹

Affiliation:

1. Karunya Institute of Technology and Sciences,ECE Department,Coimbatore,TamilNadu,India

2. Sri Ramakrishna Engineering College,ECE Department,Coimbatore,TamilNadu,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9780660/9780663/09780778.pdf?arnumber=9780778

Reference27 articles.

1. High-Performance GaN MOSFET With;laalo,2012

2. Device Performance of Silicon Nanotube Field Effect Transistor

3. A Dual-Material Gate Junctionless Transistor With High-$k$ Spacer for Enhanced Analog Performance

4. GaN Nanotube FET With Embedded Gate for High Performance, Low Power Applications

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Study of Nanowire FET & Internal Gate Nanowire FET;2024 2nd International Conference on Device Intelligence, Computing and Communication Technologies (DICCT);2024-03-15

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