Design and development of X band GaN HEMT Power Amplifier
Author:
Affiliation:
1. SSPL, DRDO,Solid State Physics Laboratory,Delhi,India
2. Indian Institute of Technology (IIT),Delhi,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9780660/9780663/09780802.pdf?arnumber=9780802
Reference11 articles.
1. 43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers;piotrowiczi;IMS 2010,0
2. 53% PAE 32 W miniaturised X Band GaN power amplifier;ono;MMIC Proceeding of Asia pacific microwave conference,2018
3. High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates
4. S Band Discrete and MMIC Power Amplifiers;nilsson;European Microwave Integrated Circuits Conference,2009
5. Design and development of (1.2-2.7) GHz GaN HEMT based broadband power amplifier
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1. Performance Characteristics of S-Band GaN HEMT-based RF Power Amplifier Implemented on DC Bias Limitation;2024 International Conference on Integrated Circuits and Communication Systems (ICICACS);2024-02-23
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