How to Achieve Large-Area Ultra-Fast Operation of MoS<sub>2</sub> Monolayer Flash Memories?-Reference-Cited by-同舟云学术

How to Achieve Large-Area Ultra-Fast Operation of MoS₂ Monolayer Flash Memories?

Published:2023-10 Issue:5 Volume:17 Page:39-43
ISSN:1932-4510
Container-title:IEEE Nanotechnology Magazine
language:
Short-container-title:IEEE Nanotechnology Mag.

Author:

Marega Guilherme Migliato¹^ORCID,Wang Zhenyu¹^ORCID,Zhao Yanfei¹^ORCID,Ji Hyun Goo¹^ORCID,Ottesen Asmund¹^ORCID,Tripathi Mukesh¹^ORCID,Radenovic Aleksandra²^ORCID,Kis Andras¹^ORCID

Affiliation:

1. École Polytechnique Fédérale de Lausanne (EPFL), Institute of Electrical and Microengineering and Institute of Materials Science and Engineering, Lausanne, Switzerland

2. École Polytechnique Fédérale de Lausanne (EPFL), Institute of Bioengineering, Lausanne, Switzerland

Funder

European Union's Horizon 2020 Research and Innovation Program

H2020 European Research Council

CCMX Materials Challenge

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Mechanical Engineering

Link

http://xplorestaging.ieee.org/ielx7/4451717/10268670/10256237.pdf?arnumber=10256237

Reference20 articles.

1. Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices

2. An ultrafast bipolar flash memory for self-activated in-memory computing

3. Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS₂

4. Logic-in-memory based on an atomically thin semiconductor

5. Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning

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