Simulation of Crack Initiation and Propagation in Solder Layer of IGBT Module under Temperature Shock in 3D Model Based on Phase Field Method-Reference-Cited by-同舟云学术

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Simulation of Crack Initiation and Propagation in Solder Layer of IGBT Module under Temperature Shock in 3D Model Based on Phase Field Method

Published:2023-08-08 Issue: Volume: Page:1-6
ISSN:
Container-title:2023 24th International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Qin Jiaolong¹,Wu Fengshun¹,Zhou Longzao¹,Ding Liguo²,Liu Hui¹,Xiang Yuan³

Affiliation:

1. Huazhong University of Science and Technology,School of Materials Science and Engineering,Wuhan,China

2. Chengdu Silan Semiconductor Manufacturing Co., LTD,Chengdu,China

3. Auhui North Microelectronics Research Institute Group Corporation Limited,Bengbu,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10491594/10491891/10492289.pdf?arnumber=10492289

Reference10 articles.

1. A Review on IGBT Module Failure Modes and Lifetime Testing

2. On the hydraulic fracturing in naturally-layered porous media using the phase field method

3. Simulation of crack propagation in solder layer of IGBT device under temperature shock by viscoplastic phase field method

4. Thermo-elasto-plastic phase-field modelling of mechanical behaviours of sintered nano-silver with randomly distributed micro-pores

5. Thermodynamically consistent phase-field models of fracture: Variational principles and multi-field FE implementations

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