Improving Optical and Electronic Performance of Monolayer Silicon Carbide via Metal Doping-Reference-Cited by-同舟云学术

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Improving Optical and Electronic Performance of Monolayer Silicon Carbide via Metal Doping

Published:2023-08-08 Issue: Volume: Page:1-4
ISSN:
Container-title:2023 24th International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Li Junfeng¹,Tang Yanlong²,Xu Siyuan¹,Lin Tao³,Sun Tuobei⁴,Ye Huaiyu⁴

Affiliation:

1. Southern University of Science and Technology,School of Microelectronics,Shenzhen,China

2. Research Institute of Fudan University in Ningbo,Ningbo,China

3. ShenZhen PhasedCom Communication Technology Co., Ltd.,Shenzhen,China

4. Southern University of Science and Technology,Joint Lab for Advanced Semiconductor Packaging Technologies; Joint Lab for Advanced Packaging and Testing Technology of Integrated Circuits; School of Microelectronics,Shenzhen,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10491594/10491891/10492296.pdf?arnumber=10492296

Reference10 articles.

1. Synthesis and characterisation of medium surface area silicon carbide nanotubes

2. Predicting Two-Dimensional Silicon Carbide Monolayers

3. Two-dimensional gas of massless Dirac fermions in graphene

4. Soft Synthesis of Single-Crystal Silicon Monolayer Sheets

5. Gas-Sensing Properties of the SiC Monolayer and Bilayer: A Density Functional Theory Study

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