Research on the electromigration failure of W interconnects under high-temperature environment
Author:
Affiliation:
1. Zhejiang University of Technology,College of Mechanical Engineering,Hangzhou,China
2. Quzhou University,College of Mechanical Engineering,Quzhou,China
3. Chang’an University,Chang’an Dublin International College of Transportation,Xi’an,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10491594/10491891/10492002.pdf?arnumber=10492002
Reference13 articles.
1. High temperature SOI CMOS technology and circuit realization for applications up to 300°C
2. Selective formation of tungsten nanowires
3. Graphene-coated tungsten nanowires deliver unprecedented modulus and strength
4. Interconnecting device opportunities for gigascale integration (GSI)
5. Reliability of CMOS on Silicon-on-Insulator for Use at 250 $^{\circ}\hbox{C}$
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