Effect of insulating material and structure on the reliability of silicon through hole under thermal stress-Reference-Cited by-同舟云学术

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Effect of insulating material and structure on the reliability of silicon through hole under thermal stress

Published:2023-08-08 Issue: Volume: Page:1-5
ISSN:
Container-title:2023 24th International Conference on Electronic Packaging Technology (ICEPT)
language:
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Author:

Li Zongyang¹,Yao Quanbin¹,Lin Pengrong¹,Huang Yingzhuo¹,Xie Xiaochen¹,Qu Zhibo¹,Xie Shuang¹,Meng Jinxiao²

Affiliation:

1. Beijing Mxtronics Corporation,Package R&D Center,Beijing,China

2. Beijing Mxtronics Corporation,Reliability R&D Room,Beijing,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10491594/10491891/10492383.pdf?arnumber=10492383

Reference12 articles.

1. Effective thermal conductivity model for TSVs with insulation layer as contact resistance

2. The experimental analysis and the mechanical model for the debonding failure of TSV-Cu/Si interface

3. Thermal stress induced delamination of through silicon vias in 3-D interconnects

4. Characterizing Interfacial Sliding of Through-Silicon-Via by Nano-Indentation

5. Study on the relationship between Cu protrusion behavior and stresses evolution in the through-silicon via characterized by in-situ μ-Raman spectroscopy

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