Optical gain gradient under electric field on GaAsSb/InAs heterostructure-Reference-Cited by-同舟云学术

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Optical gain gradient under electric field on GaAsSb/InAs heterostructure

Published:2023-02-20 Issue: Volume: Page:
ISSN:
Container-title:2023 Advances in Science and Engineering Technology International Conferences (ASET)
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Author:

Kattayat Sandhya¹,Quraishi A. M.²,Kumar Kuldeep³,Josey Smitha⁴,Alvi Parvez Ahmad⁵,Haider Syed Firoz⁵

Affiliation:

1. Higher Colleges of Technology,Abu Dhabi,UAE

2. College of Engineering, Qassim University,Department of Electrical Engineering,Unaizah,Saudi Arbia

3. Government Degree College Akhnoor,Department of Physics,Jammu,J&K,India,181201

4. Higher Colleges of Technology,Sharjah,UAE

5. Banasthali Vidyapith,Department of Physics,Rajasthan,India,304022

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10180403/10180404/10180796.pdf?arnumber=10180796

Reference13 articles.

1. Wavefunctions and optical gain in Al0.8Ga0.2As/GaAs0.8P0.2 type-I QW-heterostructure under external electric field;singh;2017 international conference on computer communications and electronics (Co mptelix),0

2. Tuning the responsible parameters for gain characteristics of the novel type-II D-QW (InGaAs) heterostructure;md;Materials Science in Semiconductor Processing,2022

3. Engineering a Robust Flat Band in III–V Semiconductor Heterostructures

4. Uniaxial strain induced optical properties of complex type-II InGaAs/InAs/GaAsSb nano-scale heterostructure;garima;Optik,2017

5. Field effective band alignment and optical gain in type-I Al0.45Ga0.55As/GaAs0.84P0.16 nano-heterostructures

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