Multibit resonant tunneling diode SRAM cell based on slew-rate addressing-Reference-Cited by-同舟云学术

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Multibit resonant tunneling diode SRAM cell based on slew-rate addressing

Published:1999 Issue:1 Volume:46 Page:55-62
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

van der Wagt J.P.A.,Tang H.,Broekaert T.P.E.,Seabaugh A.C.,Kao Y.-C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/16/15902/00737441.pdf?arnumber=737441

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