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Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature

  • Published:2003-10 Issue:10 Volume:15 Page:1342-1344
  • ISSN:1041-1135
  • Container-title:IEEE Photonics Technology Letters
  • language:
  • Short-container-title:IEEE Photon. Technol. Lett.

Author:

Ru-Chin Tu ,Chun-Ju Tun ,Shyi-Ming Pan ,Chang-Cheng Chuo ,Sheu J.K.,Ching-En Tsai ,Te-Chung Wang ,Gou-Chung Chi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Parabolic Quantum Well on Internal Quantum Efficiency of InGaN/GaN based Micro-LED at low current density;2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2022-09-12

2. Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density;Nanoscale Research Letters;2021-06-03

3. Review—A Survey of Simulations on Device Engineering of GaN-Based Light-Emitting Diodes;ECS Journal of Solid State Science and Technology;2020-07-15

4. Reduction of Electron Leakage of AlGaN-Based Deep Ultraviolet Laser Diodes Using an Inverse-Trapezoidal Electron Blocking Layer*;Chinese Physics Letters;2020-02-01

5. Suggestions on Efficiency Droop of GaN-based LEDs;IOP Conference Series: Materials Science and Engineering;2020-01-01
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